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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N4410/D Amplifier Transistor NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 2N4410 1 2 3 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 80 120 5.0 250 625 5.0 1.5 12 - 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C CASE 29-04, STYLE 1 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector - Emitter Breakdown Voltage (IC = 500 Adc, VBE = 5.0 Vdc, RBE = 8.2 k ohms) Collector - Base Breakdown Voltage (IC = 10 Adc, IE = 0) Emitter - Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO V(BR)CEX V(BR)CBO V(BR)EBO ICBO -- -- IEBO -- 0.01 1.0 0.1 Adc 80 120 120 5.0 -- -- -- -- Vdc Vdc Vdc Vdc Adc REV 1 Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1996 1 2N4410 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) Collector - Emitter Saturation Voltage (IC = 1.0 mAdc, IB = 0.1 mAdc) Base - Emitter Saturation Voltage (IC = 1.0 mAdc, IB = 0.1 mAdc) Base - Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE 60 60 VCE(sat) VBE(sat) VBE(on) -- -- -- -- 400 0.2 0.8 0.8 Vdc Vdc Vdc -- SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product(2) (IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) Collector-Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz, emitter guarded) Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz, collector guarded) 2. fT = |hfe| * ftest. 500 300 200 h FE, DC CURRENT GAIN 100 - 55C 50 30 20 10 7.0 5.0 0.1 TJ = 125C 25C VCE = 1.0 V VCE = 5.0 V fT Ccb Ceb 60 -- -- 300 12 50 MHz pF pF 0.2 0.3 0.5 0.7 1.0 3.0 2.0 5.0 7.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 70 100 Figure 1. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 IC = 1.0 mA 10 mA 30 mA 100 mA Figure 2. Collector Saturation Region 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data 2N4410 101 VCE = 30 V IC, COLLECTOR CURRENT ( A) 100 10-1 10-2 10-3 10-4 10-5 0.4 TJ = 125C IC = ICES 75C REVERSE 25C FORWARD 0.3 0.1 0.2 0 0.1 0.2 0.3 0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) 0.5 0.6 Figure 3. Collector Cut-Off Region 1.0 V, TEMPERATURE COEFFICIENT (mV/ C) TJ = 25C 2.5 2.0 1.5 1.0 0.5 0 - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 TJ = - 55C to +135C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 0.6 qVC for VCE(sat) 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 1.0 2.0 3.0 5.0 10 20 30 0.2 0.3 0.5 IC, COLLECTOR CURRENT (mA) 50 100 qVB for VBE(sat) Figure 4. "On" Voltages Figure 5. Temperature Coefficients 100 70 50 10.2 V Vin 10 s INPUT PULSE tr, tf 10 ns DUTY CYCLE = 1.0% 0.25 F C, CAPACITANCE (pF) VBB - 8.8 V 100 RB 5.1 k Vin 100 1N914 VCC 30 V 3.0 k RC Vout 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 Cibo TJ = 25C Cobo Values Shown are for IC @ 10 mA 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Switching Time Test Circuit Figure 7. Capacitances Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 2N4410 1000 500 300 t, TIME (ns) 200 100 50 30 20 10 0.2 0.3 0.5 td @ VEB(off) = 1.0 V VCC = 120 V 100 50 0.2 0.3 0.5 tr @ VCC = 30 V IC/IB = 10 TJ = 25C tr @ VCC = 120 V t, TIME (ns) 5000 3000 2000 tf @ VCC = 30 V 1000 500 300 200 ts @ VCC = 120 V tf @ VCC = 120 V IC/IB = 10 TJ = 25C 1.0 20 30 50 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) 100 200 20 30 50 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) 100 200 Figure 8. Turn-On Time Figure 9. Turn-Off Time 4 Motorola Small-Signal Transistors, FETs and Diodes Device Data 2N4410 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- A R P SEATING PLANE B F L K D XX G H V 1 J C N N SECTION X-X DIM A B C D F G H J K L N P R V CASE 029-04 (TO-226AA) ISSUE AD STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Motorola Small-Signal Transistors, FETs and Diodes Device Data 5 2N4410 How to reach us: USA/EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Small-Signal Transistors, FETs and Diodes Device Data *2N4410/D* 2N4410/D |
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